N-Channel MOSFET, 95 A, 100 V, 8-Pin PowerPAK SO-8 Vishay SiR170DP-T1-RE3

RS noliktavas nr.: 200-6804Ražotājs: VishayRažotāja kods: SiR170DP-T1-RE3
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

95 A

Maximum Drain Source Voltage

100 V

Package Type

PowerPAK SO-8

Pin Count

8

Maximum Drain Source Resistance

0.0048 Ω, 0.00585 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Number of Elements per Chip

1

Series

TrenchFET® Gen IV

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 1,05

Katrs (Rulli ir 3000) (bez PVN)

€ 1,27

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 95 A, 100 V, 8-Pin PowerPAK SO-8 Vishay SiR170DP-T1-RE3

€ 1,05

Katrs (Rulli ir 3000) (bez PVN)

€ 1,27

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 95 A, 100 V, 8-Pin PowerPAK SO-8 Vishay SiR170DP-T1-RE3
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

95 A

Maximum Drain Source Voltage

100 V

Package Type

PowerPAK SO-8

Pin Count

8

Maximum Drain Source Resistance

0.0048 Ω, 0.00585 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Number of Elements per Chip

1

Series

TrenchFET® Gen IV

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more