N-Channel MOSFET, 11 A, 45 V, 4-Pin PowerPAK SO-8L Vishay SIJ150DP-T1-GE3

RS noliktavas nr.: 200-6841Ražotājs: VishayRažotāja kods: SIJ150DP-T1-GE3
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Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

45 V

Series

TrenchFET® Gen IV

Package Type

PowerPAK SO-8L

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

0.0041 Ω, 0.00283 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Number of Elements per Chip

1

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Noliktavas stāvoklis patreiz nav pieejams

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Noliktavas stāvoklis patreiz nav pieejams

€ 0,594

Katrs (Rulli ir 3000) (bez PVN)

€ 0,719

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 11 A, 45 V, 4-Pin PowerPAK SO-8L Vishay SIJ150DP-T1-GE3

€ 0,594

Katrs (Rulli ir 3000) (bez PVN)

€ 0,719

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 11 A, 45 V, 4-Pin PowerPAK SO-8L Vishay SIJ150DP-T1-GE3
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

45 V

Series

TrenchFET® Gen IV

Package Type

PowerPAK SO-8L

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

0.0041 Ω, 0.00283 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more