N-Channel MOSFET, 25 A, 400 V, 3-Pin TO-247AC Vishay SIHG25N40D-GE3

RS noliktavas nr.: 145-1829Ražotājs: VishayRažotāja kods: SIHG25N40D-GE3
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Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

400 V

Series

D Series

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

170 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

278 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.31mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

15.87mm

Typical Gate Charge @ Vgs

44.4 nC @ 10 V

Height

20.82mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 78,75

€ 3,15 Katrs (Tubina ir 25) (bez PVN)

€ 95,29

€ 3,812 Katrs (Tubina ir 25) (Ieskaitot PVN)

N-Channel MOSFET, 25 A, 400 V, 3-Pin TO-247AC Vishay SIHG25N40D-GE3

€ 78,75

€ 3,15 Katrs (Tubina ir 25) (bez PVN)

€ 95,29

€ 3,812 Katrs (Tubina ir 25) (Ieskaitot PVN)

N-Channel MOSFET, 25 A, 400 V, 3-Pin TO-247AC Vishay SIHG25N40D-GE3
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Penālis
25 - 25€ 3,15€ 78,75
50 - 100€ 2,95€ 73,75
125+€ 2,70€ 67,50

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

400 V

Series

D Series

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

170 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

278 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.31mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

15.87mm

Typical Gate Charge @ Vgs

44.4 nC @ 10 V

Height

20.82mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more