Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
123 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
39 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
10.63mm
Typical Gate Charge @ Vgs
80 nC @ 10 V
Width
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
16.12mm
Series
EF Series
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 7,80
Katrs (tiek piegadats Tubina) (bez PVN)
€ 9,438
Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
2
€ 7,80
Katrs (tiek piegadats Tubina) (bez PVN)
€ 9,438
Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
2
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
123 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
39 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
10.63mm
Typical Gate Charge @ Vgs
80 nC @ 10 V
Width
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
16.12mm
Series
EF Series
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts