N-Channel MOSFET, 3 A, 500 V, 3-Pin DPAK Vishay SIHD3N50D-GE3

RS noliktavas nr.: 787-9143Ražotājs: VishayRažotāja kods: SIHD3N50D-GE3
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Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

500 V

Series

D Series

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

6 nC @ 10 V

Width

6.22mm

Maximum Operating Temperature

+150 °C

Length

6.73mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

2.38mm

Produkta apraksts

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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N-Channel MOSFET, 3 A, 500 V, 3-Pin DPAK Vishay SIHD3N50D-GE3
€ 0,983Katrs (Tubina ir 50) (bez PVN)

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 3,44

€ 0,687 Katrs (Paka ir 5) (bez PVN)

€ 4,16

€ 0,831 Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 3 A, 500 V, 3-Pin DPAK Vishay SIHD3N50D-GE3

€ 3,44

€ 0,687 Katrs (Paka ir 5) (bez PVN)

€ 4,16

€ 0,831 Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 3 A, 500 V, 3-Pin DPAK Vishay SIHD3N50D-GE3
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
5 - 45€ 0,687€ 3,44
50 - 95€ 0,568€ 2,84
100 - 245€ 0,521€ 2,60
250 - 495€ 0,492€ 2,46
500+€ 0,476€ 2,38

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt
N-Channel MOSFET, 3 A, 500 V, 3-Pin DPAK Vishay SIHD3N50D-GE3
€ 0,983Katrs (Tubina ir 50) (bez PVN)

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

500 V

Series

D Series

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

6 nC @ 10 V

Width

6.22mm

Maximum Operating Temperature

+150 °C

Length

6.73mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

2.38mm

Produkta apraksts

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt
N-Channel MOSFET, 3 A, 500 V, 3-Pin DPAK Vishay SIHD3N50D-GE3
€ 0,983Katrs (Tubina ir 50) (bez PVN)