Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
6 nC @ 10 V
Width
6.22mm
Maximum Operating Temperature
+150 °C
Length
6.73mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.38mm
Produkta apraksts
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 3,44
€ 0,687 Katrs (Paka ir 5) (bez PVN)
€ 4,16
€ 0,831 Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 3,44
€ 0,687 Katrs (Paka ir 5) (bez PVN)
€ 4,16
€ 0,831 Katrs (Paka ir 5) (Ieskaitot PVN)
5
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
5 - 45 | € 0,687 | € 3,44 |
50 - 95 | € 0,568 | € 2,84 |
100 - 245 | € 0,521 | € 2,60 |
250 - 495 | € 0,492 | € 2,46 |
500+ | € 0,476 | € 2,38 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
6 nC @ 10 V
Width
6.22mm
Maximum Operating Temperature
+150 °C
Length
6.73mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.38mm
Produkta apraksts