N-Channel MOSFET, 11.1 A, 100 V, 8-Pin SOIC Vishay SI4056DY-T1-GE3
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
11.1 A
Maximum Drain Source Voltage
100 V
Series
ThunderFET
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
31 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
5.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
19.6 nC @ 10 V
Width
4mm
Minimum Operating Temperature
-55 °C
Height
1.5mm
Produkta apraksts
N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 4,81
€ 0,962 Katrs (Paka ir 5) (bez PVN)
€ 5,82
€ 1,164 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
€ 4,81
€ 0,962 Katrs (Paka ir 5) (bez PVN)
€ 5,82
€ 1,164 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
Pirkt iepakojumos
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 5 - 45 | € 0,962 | € 4,81 |
| 50 - 245 | € 0,817 | € 4,08 |
| 250 - 495 | € 0,674 | € 3,37 |
| 500 - 1245 | € 0,635 | € 3,18 |
| 1250+ | € 0,598 | € 2,99 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
11.1 A
Maximum Drain Source Voltage
100 V
Series
ThunderFET
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
31 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
5.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
19.6 nC @ 10 V
Width
4mm
Minimum Operating Temperature
-55 °C
Height
1.5mm
Produkta apraksts
N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products