N-Channel MOSFET, 10 A, 60 V, 3-Pin TO-220AB Vishay IRFZ14PBF

RS noliktavas nr.: 541-1685Ražotājs: VishayRažotāja kods: IRFZ14PBF
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

43 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

11 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.41mm

Width

4.7mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

9.01mm

Produkta apraksts

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

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Noliktavas stāvoklis patreiz nav pieejams

€ 1,15

Katrs (bez PVN)

€ 1,39

Katrs (Ieskaitot PVN)

N-Channel MOSFET, 10 A, 60 V, 3-Pin TO-220AB Vishay IRFZ14PBF
Izvēlēties iepakojuma veidu

€ 1,15

Katrs (bez PVN)

€ 1,39

Katrs (Ieskaitot PVN)

N-Channel MOSFET, 10 A, 60 V, 3-Pin TO-220AB Vishay IRFZ14PBF
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cena
1 - 9€ 1,15
10 - 49€ 1,00
50 - 99€ 0,94
100 - 249€ 0,86
250+€ 0,79

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

43 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

11 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.41mm

Width

4.7mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

9.01mm

Produkta apraksts

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more