Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
43 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
11 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.41mm
Width
4.7mm
Transistor Material
Si
Height
9.01mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,81
Katrs (bez PVN)
€ 0,98
Katrs (Ieskaitot PVN)
1
€ 0,81
Katrs (bez PVN)
€ 0,98
Katrs (Ieskaitot PVN)
1
Pirkt iepakojumos
Daudzums | Vienības cena |
---|---|
1 - 9 | € 0,81 |
10 - 49 | € 0,72 |
50 - 99 | € 0,66 |
100 - 249 | € 0,61 |
250+ | € 0,56 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
43 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
11 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.41mm
Width
4.7mm
Transistor Material
Si
Height
9.01mm
Minimum Operating Temperature
-55 °C
Produkta apraksts