P-Channel MOSFET, 30 A, 40 V, 4-Pin PowerPAK SO-8L Vishay Siliconix SQJ415EP-T1_GE3

RS noliktavas nr.: 178-3717Ražotājs: Vishay SiliconixRažotāja kods: SQJ415EP-T1_GE3
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Specifikācija

Channel Type

P

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

PowerPAK SO-8L

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

5.99mm

Typical Gate Charge @ Vgs

63 nC @ 10 V

Height

1.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 1 311,00

€ 0,437 Katrs (Rulli ir 3000) (bez PVN)

€ 1 586,31

€ 0,529 Katrs (Rulli ir 3000) (Ieskaitot PVN)

P-Channel MOSFET, 30 A, 40 V, 4-Pin PowerPAK SO-8L Vishay Siliconix SQJ415EP-T1_GE3

€ 1 311,00

€ 0,437 Katrs (Rulli ir 3000) (bez PVN)

€ 1 586,31

€ 0,529 Katrs (Rulli ir 3000) (Ieskaitot PVN)

P-Channel MOSFET, 30 A, 40 V, 4-Pin PowerPAK SO-8L Vishay Siliconix SQJ415EP-T1_GE3
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

PowerPAK SO-8L

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

5.99mm

Typical Gate Charge @ Vgs

63 nC @ 10 V

Height

1.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more