P-Channel MOSFET Transistor, 18 A, 30 V, 8-Pin SOP Toshiba TPC8114(TE12L,Q)

RS noliktavas nr.: 415-180Ražotājs: ToshibaRažotāja kods: TPC8114(TE12L,Q)
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Specifikācija

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

30 V

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

1.9 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

180 nC @ 10 V

Width

4.4mm

Minimum Operating Temperature

-55 °C

Height

1.5mm

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Katrs (Paka ir 5) (bez PVN)

P-Channel MOSFET Transistor, 18 A, 30 V, 8-Pin SOP Toshiba TPC8114(TE12L,Q)
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P.O.A.

Katrs (Paka ir 5) (bez PVN)

P-Channel MOSFET Transistor, 18 A, 30 V, 8-Pin SOP Toshiba TPC8114(TE12L,Q)
Noliktavas stāvoklis patreiz nav pieejams
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

30 V

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

1.9 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

180 nC @ 10 V

Width

4.4mm

Minimum Operating Temperature

-55 °C

Height

1.5mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt