Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.5 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
48 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Length
5.99mm
Typical Gate Charge @ Vgs
90 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
5mm
Transistor Material
Si
Height
1.07mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 12,28
€ 0,614 Katrs (Paka ir 20) (bez PVN)
€ 14,86
€ 0,743 Katrs (Paka ir 20) (Ieskaitot PVN)
Standarts
20
€ 12,28
€ 0,614 Katrs (Paka ir 20) (bez PVN)
€ 14,86
€ 0,743 Katrs (Paka ir 20) (Ieskaitot PVN)
Standarts
20
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
20 - 180 | € 0,614 | € 12,28 |
200 - 480 | € 0,583 | € 11,66 |
500 - 980 | € 0,492 | € 9,84 |
1000 - 1980 | € 0,461 | € 9,22 |
2000+ | € 0,431 | € 8,62 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.5 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
48 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Length
5.99mm
Typical Gate Charge @ Vgs
90 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
5mm
Transistor Material
Si
Height
1.07mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts