N-Channel MOSFET, 5.8 A, 650 V, 3-Pin DPAK Toshiba TK6P65W,RQ(S

RS noliktavas nr.: 133-2800Ražotājs: ToshibaRažotāja kods: TK6P65W,RQ(S
brand-logo
Skatīt visu MOSFET tranzistori

Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

5.8 A

Maximum Drain Source Voltage

650 V

Series

DTMOSIV

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.05 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

6.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

11 nC @ 10 V

Height

2.3mm

Forward Diode Voltage

1.7V

Izcelsmes valsts

Japan

Produkta apraksts

MOSFET N-Channel, TK6 & TK7 Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 6,77

€ 0,677 Katrs (Paka ir 10) (bez PVN)

€ 8,19

€ 0,819 Katrs (Paka ir 10) (Ieskaitot PVN)

N-Channel MOSFET, 5.8 A, 650 V, 3-Pin DPAK Toshiba TK6P65W,RQ(S

10

Pieejams komplektos pa 10
10€ 6,77
20€ 13,54
30€ 20,31
40€ 27,08
50€ 30,35
60€ 36,42
70€ 42,49
80€ 48,56
90€ 54,63
100€ 59,00
110€ 64,90
120€ 70,80
130€ 76,70
140€ 82,60
150€ 88,50

€ 6,77

€ 0,677 Katrs (Paka ir 10) (bez PVN)

€ 8,19

€ 0,819 Katrs (Paka ir 10) (Ieskaitot PVN)

N-Channel MOSFET, 5.8 A, 650 V, 3-Pin DPAK Toshiba TK6P65W,RQ(S
Noliktavas stāvoklis patreiz nav pieejams

10

Pieejams komplektos pa 10
10€ 6,77
20€ 13,54
30€ 20,31
40€ 27,08
50€ 30,35
60€ 36,42
70€ 42,49
80€ 48,56
90€ 54,63
100€ 59,00
110€ 64,90
120€ 70,80
130€ 76,70
140€ 82,60
150€ 88,50

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
10 - 40€ 0,677€ 6,77
50 - 90€ 0,607€ 6,07
100 - 490€ 0,59€ 5,90
500 - 990€ 0,565€ 5,65
1000+€ 0,55€ 5,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

5.8 A

Maximum Drain Source Voltage

650 V

Series

DTMOSIV

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.05 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

6.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

11 nC @ 10 V

Height

2.3mm

Forward Diode Voltage

1.7V

Izcelsmes valsts

Japan

Produkta apraksts

MOSFET N-Channel, TK6 & TK7 Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more