N-Channel MOSFET, 55 A, 80 V, 3-Pin TO-220 Toshiba TK35E08N1

RS noliktavas nr.: 796-5080Ražotājs: ToshibaRažotāja kods: TK35E08N1
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Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

80 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

12.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

72 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.16mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Width

4.45mm

Transistor Material

Si

Height

15.1mm

Produkta apraksts

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

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Noliktavas stāvoklis patreiz nav pieejams

€ 1,30

Katrs (Paka ir 5) (bez PVN)

€ 1,573

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 55 A, 80 V, 3-Pin TO-220 Toshiba TK35E08N1
Izvēlēties iepakojuma veidu

€ 1,30

Katrs (Paka ir 5) (bez PVN)

€ 1,573

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 55 A, 80 V, 3-Pin TO-220 Toshiba TK35E08N1
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt

Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

80 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

12.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

72 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.16mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Width

4.45mm

Transistor Material

Si

Height

15.1mm

Produkta apraksts

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt