SiC N-Channel MOSFET Module, 38 A, 600 V Depletion, 3-Pin TO-247 STMicroelectronics STWA65N60DM6
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
600 V
Series
ST
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.06 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
4.75V
Number of Elements per Chip
1
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 7,60
Katrs (Tubina ir 30) (bez PVN)
€ 9,196
Katrs (Tubina ir 30) (Ieskaitot PVN)
30
€ 7,60
Katrs (Tubina ir 30) (bez PVN)
€ 9,196
Katrs (Tubina ir 30) (Ieskaitot PVN)
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
600 V
Series
ST
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.06 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
4.75V
Number of Elements per Chip
1
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products