SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STMicroelectronics STW70N65DM6

RS noliktavas nr.: 202-5546Ražotājs: STMicroelectronicsRažotāja kods: STW70N65DM6
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

68 A

Maximum Drain Source Voltage

650 V

Series

ST

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.036 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

4.75V

Number of Elements per Chip

1

Transistor Material

SiC

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Noliktavas stāvoklis patreiz nav pieejams

€ 11,90

Katrs (Tubina ir 30) (bez PVN)

€ 14,399

Katrs (Tubina ir 30) (Ieskaitot PVN)

SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STMicroelectronics STW70N65DM6

€ 11,90

Katrs (Tubina ir 30) (bez PVN)

€ 14,399

Katrs (Tubina ir 30) (Ieskaitot PVN)

SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STMicroelectronics STW70N65DM6
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

68 A

Maximum Drain Source Voltage

650 V

Series

ST

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.036 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

4.75V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more