Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
100 V
Package Type
TO-247
Series
STripFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
312 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
15.75mm
Typical Gate Charge @ Vgs
172 nC @ 10 V
Width
5.15mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
20.15mm
Izcelsmes valsts
China
Produkta apraksts
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 84,00
€ 2,80 Katrs (Tubina ir 30) (bez PVN)
€ 101,64
€ 3,388 Katrs (Tubina ir 30) (Ieskaitot PVN)
30
€ 84,00
€ 2,80 Katrs (Tubina ir 30) (bez PVN)
€ 101,64
€ 3,388 Katrs (Tubina ir 30) (Ieskaitot PVN)
30
Pirkt iepakojumos
Daudzums | Vienības cena | Per Penālis |
---|---|---|
30 - 60 | € 2,80 | € 84,00 |
90 - 480 | € 2,35 | € 70,50 |
510 - 960 | € 2,10 | € 63,00 |
990 - 4980 | € 1,95 | € 58,50 |
5010+ | € 1,65 | € 49,50 |
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
100 V
Package Type
TO-247
Series
STripFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
312 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
15.75mm
Typical Gate Charge @ Vgs
172 nC @ 10 V
Width
5.15mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
20.15mm
Izcelsmes valsts
China
Produkta apraksts