Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
60 V
Series
DeepGate, STripFET
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
17 nC @ 5 V
Width
4mm
Transistor Material
Si
Height
1.65mm
Produkta apraksts
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 8,80
€ 0,88 Katrs (Paka ir 10) (bez PVN)
€ 10,65
€ 1,065 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
€ 8,80
€ 0,88 Katrs (Paka ir 10) (bez PVN)
€ 10,65
€ 1,065 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
10 - 40 | € 0,88 | € 8,80 |
50 - 90 | € 0,837 | € 8,37 |
100 - 240 | € 0,752 | € 7,52 |
250 - 490 | € 0,678 | € 6,78 |
500+ | € 0,644 | € 6,44 |
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
60 V
Series
DeepGate, STripFET
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
17 nC @ 5 V
Width
4mm
Transistor Material
Si
Height
1.65mm
Produkta apraksts
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.