P-Channel MOSFET, 10 A, 40 V, 8-Pin SOIC STMicroelectronics STS10P4LLF6
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
40 V
Series
STripFET
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5mm
Typical Gate Charge @ Vgs
34 nC @ 4.5 V
Height
1.5mm
Forward Diode Voltage
1.1V
Izcelsmes valsts
China
Produkta apraksts
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 2 345,00
€ 0,938 Katrs (Rulli ir 2500) (bez PVN)
€ 2 837,45
€ 1,135 Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
€ 2 345,00
€ 0,938 Katrs (Rulli ir 2500) (bez PVN)
€ 2 837,45
€ 1,135 Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
40 V
Series
STripFET
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5mm
Typical Gate Charge @ Vgs
34 nC @ 4.5 V
Height
1.5mm
Forward Diode Voltage
1.1V
Izcelsmes valsts
China
Produkta apraksts
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products