N-Channel MOSFET, 90 A, 60 V, 8-Pin PowerFLAT 5 x 6 STMicroelectronics STL90N6F7
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
60 V
Series
STripFET F7
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.4 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
94 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5.4mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Width
6.35mm
Forward Diode Voltage
1.2V
Height
0.95mm
Izcelsmes valsts
China
Produkta apraksts
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 15,50
€ 1,55 Katrs (Paka ir 10) (bez PVN)
€ 18,76
€ 1,876 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
€ 15,50
€ 1,55 Katrs (Paka ir 10) (bez PVN)
€ 18,76
€ 1,876 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
Pirkt iepakojumos
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 10 - 40 | € 1,55 | € 15,50 |
| 50 - 90 | € 1,50 | € 15,00 |
| 100 - 240 | € 1,35 | € 13,50 |
| 250 - 490 | € 1,20 | € 12,00 |
| 500+ | € 1,15 | € 11,50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
60 V
Series
STripFET F7
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.4 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
94 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5.4mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Width
6.35mm
Forward Diode Voltage
1.2V
Height
0.95mm
Izcelsmes valsts
China
Produkta apraksts
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products