P-Channel MOSFET, 60 A, 40 V, 8-Pin PowerFLAT 5 x 6 STMicroelectronics STL60P4LLF6
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
40 V
Package Type
PowerFLAT 5 x 6
Series
STripFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
19 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.35mm
Typical Gate Charge @ Vgs
34 nC @ 4.5 V
Height
0.95mm
Forward Diode Voltage
1.1V
Izcelsmes valsts
China
Produkta apraksts
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 2 094,00
€ 0,698 Katrs (Rulli ir 3000) (bez PVN)
€ 2 533,74
€ 0,845 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 2 094,00
€ 0,698 Katrs (Rulli ir 3000) (bez PVN)
€ 2 533,74
€ 0,845 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
40 V
Package Type
PowerFLAT 5 x 6
Series
STripFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
19 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.35mm
Typical Gate Charge @ Vgs
34 nC @ 4.5 V
Height
0.95mm
Forward Diode Voltage
1.1V
Izcelsmes valsts
China
Produkta apraksts
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products