Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
900 V
Series
SiC MOSFET
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.33 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Number of Elements per Chip
1
Transistor Material
SiC
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 5,10
Katrs (Tubina ir 50) (bez PVN)
€ 6,171
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 5,10
Katrs (Tubina ir 50) (bez PVN)
€ 6,171
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
Pirkt iepakojumos
Daudzums | Vienības cena | Per Penālis |
---|---|---|
50 - 50 | € 5,10 | € 255,00 |
100 - 200 | € 4,40 | € 220,00 |
250 - 450 | € 4,20 | € 210,00 |
500 - 950 | € 4,10 | € 205,00 |
1000+ | € 4,00 | € 200,00 |
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
900 V
Series
SiC MOSFET
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.33 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Number of Elements per Chip
1
Transistor Material
SiC