N-Channel MOSFET, 35 A, 60 V, 3-Pin DPAK STMicroelectronics STD35NF06T4

RS noliktavas nr.: 760-9893PRažotājs: STMicroelectronicsRažotāja kods: STD35NF06T4
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

60 V

Series

STripFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

80 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

44.5 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.6mm

Width

6.2mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

2.4mm

Produkta apraksts

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Noliktavas stāvoklis patreiz nav pieejams

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€ 0,46

Katrs (tiek piegadats Rulli) (bez PVN)

€ 0,557

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

N-Channel MOSFET, 35 A, 60 V, 3-Pin DPAK STMicroelectronics STD35NF06T4
Izvēlēties iepakojuma veidu

€ 0,46

Katrs (tiek piegadats Rulli) (bez PVN)

€ 0,557

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

N-Channel MOSFET, 35 A, 60 V, 3-Pin DPAK STMicroelectronics STD35NF06T4
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

60 V

Series

STripFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

80 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

44.5 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.6mm

Width

6.2mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

2.4mm

Produkta apraksts

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more