Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
60 V
Series
STripFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
80 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
44.5 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.6mm
Width
6.2mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.4mm
Produkta apraksts
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,46
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,557
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
5
€ 0,46
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,557
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
5
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
60 V
Series
STripFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
80 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
44.5 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.6mm
Width
6.2mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.4mm
Produkta apraksts