SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 STMicroelectronics SCTW100N65G2AG
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
33 A
Maximum Drain Source Voltage
1200 V
Series
SCT
Package Type
H²PAK-7
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
0.105 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
5V
Number of Elements per Chip
1
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 36,70
Katrs (Tubina ir 30) (bez PVN)
€ 44,407
Katrs (Tubina ir 30) (Ieskaitot PVN)
30
€ 36,70
Katrs (Tubina ir 30) (bez PVN)
€ 44,407
Katrs (Tubina ir 30) (Ieskaitot PVN)
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
33 A
Maximum Drain Source Voltage
1200 V
Series
SCT
Package Type
H²PAK-7
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
0.105 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
5V
Number of Elements per Chip
1
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products