SiC N-Channel MOSFET Module, 98 A, 650 V Depletion, 7-Pin H2PAK-7 STMicroelectronics SCTH100N65G2-7AG

RS noliktavas nr.: 202-5481Ražotājs: STMicroelectronicsRažotāja kods: SCTH100N65G2-7AG
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

98 A

Maximum Drain Source Voltage

650 V

Package Type

H²PAK-7

Series

SCT

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.02 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

5V

Transistor Material

SiC

Number of Elements per Chip

1

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€ 35,20

€ 35,20 Katrs (bez PVN)

€ 42,59

€ 42,59 Katrs (Ieskaitot PVN)

SiC N-Channel MOSFET Module, 98 A, 650 V Depletion, 7-Pin H2PAK-7 STMicroelectronics SCTH100N65G2-7AG
Izvēlēties iepakojuma veidu

€ 35,20

€ 35,20 Katrs (bez PVN)

€ 42,59

€ 42,59 Katrs (Ieskaitot PVN)

SiC N-Channel MOSFET Module, 98 A, 650 V Depletion, 7-Pin H2PAK-7 STMicroelectronics SCTH100N65G2-7AG
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

98 A

Maximum Drain Source Voltage

650 V

Package Type

H²PAK-7

Series

SCT

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.02 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

5V

Transistor Material

SiC

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more