Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
196 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
62.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Length
10.28mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Width
4.82mm
Transistor Material
Si
Number of Elements per Chip
1
Height
9.28mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,983
Katrs (Paka ir 5) (bez PVN)
€ 1,189
Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
€ 0,983
Katrs (Paka ir 5) (bez PVN)
€ 1,189
Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
5 - 5 | € 0,983 | € 4,92 |
10 - 95 | € 0,835 | € 4,18 |
100 - 245 | € 0,629 | € 3,14 |
250 - 495 | € 0,619 | € 3,10 |
500+ | € 0,534 | € 2,67 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
196 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
62.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Length
10.28mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Width
4.82mm
Transistor Material
Si
Number of Elements per Chip
1
Height
9.28mm
Minimum Operating Temperature
-55 °C
Produkta apraksts