P-Channel MOSFET, 12 A, 60 V, 3-Pin TO-220 onsemi NTP2955G

RS noliktavas nr.: 780-4736Ražotājs: onsemiRažotāja kods: NTP2955G
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

196 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

62.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Length

10.28mm

Typical Gate Charge @ Vgs

14 nC @ 10 V

Width

4.82mm

Transistor Material

Si

Number of Elements per Chip

1

Height

9.28mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,983

Katrs (Paka ir 5) (bez PVN)

€ 1,189

Katrs (Paka ir 5) (Ieskaitot PVN)

P-Channel MOSFET, 12 A, 60 V, 3-Pin TO-220 onsemi NTP2955G
Izvēlēties iepakojuma veidu

€ 0,983

Katrs (Paka ir 5) (bez PVN)

€ 1,189

Katrs (Paka ir 5) (Ieskaitot PVN)

P-Channel MOSFET, 12 A, 60 V, 3-Pin TO-220 onsemi NTP2955G
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
5 - 5€ 0,983€ 4,92
10 - 95€ 0,835€ 4,18
100 - 245€ 0,629€ 3,14
250 - 495€ 0,619€ 3,10
500+€ 0,534€ 2,67

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

196 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

62.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Length

10.28mm

Typical Gate Charge @ Vgs

14 nC @ 10 V

Width

4.82mm

Transistor Material

Si

Number of Elements per Chip

1

Height

9.28mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more