Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 onsemi NTJD5121NT1G

RS noliktavas nr.: 780-0627PRažotājs: onsemiRažotāja kods: NTJD5121NT1G
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Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

266 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

0.9 nC @ 4.5 V

Width

1.35mm

Transistor Material

Si

Number of Elements per Chip

2

Height

1mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,184

Katrs (tiek piegadats Rulli) (bez PVN)

€ 0,223

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 onsemi NTJD5121NT1G
Izvēlēties iepakojuma veidu

€ 0,184

Katrs (tiek piegadats Rulli) (bez PVN)

€ 0,223

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 onsemi NTJD5121NT1G
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Rullis
50 - 100€ 0,184€ 9,20
150 - 250€ 0,088€ 4,40
300 - 550€ 0,081€ 4,05
600 - 1150€ 0,078€ 3,90
1200+€ 0,077€ 3,85

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

266 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

0.9 nC @ 4.5 V

Width

1.35mm

Transistor Material

Si

Number of Elements per Chip

2

Height

1mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more