Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
240 A
Maximum Drain Source Voltage
100 V
Package Type
H-PSOF8L
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
11.78mm
Length
9.9mm
Typical Gate Charge @ Vgs
47 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.25V
Height
2.4mm
Izcelsmes valsts
Philippines
€ 11,50
€ 2,30 Katrs (Paka ir 5) (bez PVN)
€ 13,92
€ 2,783 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
€ 11,50
€ 2,30 Katrs (Paka ir 5) (bez PVN)
€ 13,92
€ 2,783 Katrs (Paka ir 5) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Standarts
5
Noliktavas stāvoklis patreiz nav pieejams
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
5 - 45 | € 2,30 | € 11,50 |
50 - 95 | € 2,00 | € 10,00 |
100+ | € 1,70 | € 8,50 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
240 A
Maximum Drain Source Voltage
100 V
Package Type
H-PSOF8L
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
11.78mm
Length
9.9mm
Typical Gate Charge @ Vgs
47 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.25V
Height
2.4mm
Izcelsmes valsts
Philippines