Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
240 A
Maximum Drain Source Voltage
100 V
Package Type
H-PSOF8L
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
11.78mm
Length
9.9mm
Typical Gate Charge @ Vgs
47 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.25V
Height
2.4mm
Izcelsmes valsts
Philippines
€ 3 100,00
€ 1,55 Katrs (Rulli ir 2000) (bez PVN)
€ 3 751,00
€ 1,876 Katrs (Rulli ir 2000) (Ieskaitot PVN)
2000
€ 3 100,00
€ 1,55 Katrs (Rulli ir 2000) (bez PVN)
€ 3 751,00
€ 1,876 Katrs (Rulli ir 2000) (Ieskaitot PVN)
2000
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
240 A
Maximum Drain Source Voltage
100 V
Package Type
H-PSOF8L
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
11.78mm
Length
9.9mm
Typical Gate Charge @ Vgs
47 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.25V
Height
2.4mm
Izcelsmes valsts
Philippines