N-Channel MOSFET, 220 mA, 50 V, 3-Pin SOT-23 onsemi BSS138

RS noliktavas nr.: 671-0324Ražotājs: onsemiRažotāja kods: BSS138
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

220 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.92mm

Width

1.3mm

Transistor Material

Si

Typical Gate Charge @ Vgs

1.7 nC @ 10 V

Height

0.93mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,257

Katrs (Paka ir 10) (bez PVN)

€ 0,311

Katrs (Paka ir 10) (Ieskaitot PVN)

N-Channel MOSFET, 220 mA, 50 V, 3-Pin SOT-23 onsemi BSS138
Izvēlēties iepakojuma veidu

€ 0,257

Katrs (Paka ir 10) (bez PVN)

€ 0,311

Katrs (Paka ir 10) (Ieskaitot PVN)

N-Channel MOSFET, 220 mA, 50 V, 3-Pin SOT-23 onsemi BSS138
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
10 - 90€ 0,257€ 2,57
100 - 240€ 0,221€ 2,21
250 - 490€ 0,192€ 1,92
500 - 990€ 0,168€ 1,68
1000+€ 0,154€ 1,54

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

220 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.92mm

Width

1.3mm

Transistor Material

Si

Typical Gate Charge @ Vgs

1.7 nC @ 10 V

Height

0.93mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more