Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
65 W
Transistor Configuration
Cascode
Maximum Gate Source Voltage
-18 V, +18 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.53mm
Typical Gate Charge @ Vgs
6.2 nC @ 4.5 V
Width
4.83mm
Transistor Material
GaN
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
2.1V
Height
15.75mm
Izcelsmes valsts
Philippines
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 21,50
Katrs (bez PVN)
€ 26,02
Katrs (Ieskaitot PVN)
1
€ 21,50
Katrs (bez PVN)
€ 26,02
Katrs (Ieskaitot PVN)
1
Pirkt iepakojumos
Daudzums | Vienības cena |
---|---|
1 - 1 | € 21,50 |
2 - 4 | € 20,70 |
5 - 9 | € 20,60 |
10 - 49 | € 19,20 |
50+ | € 18,30 |
Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
65 W
Transistor Configuration
Cascode
Maximum Gate Source Voltage
-18 V, +18 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.53mm
Typical Gate Charge @ Vgs
6.2 nC @ 4.5 V
Width
4.83mm
Transistor Material
GaN
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
2.1V
Height
15.75mm
Izcelsmes valsts
Philippines