N-Channel MOSFET, 5.1 A, 30 V, 3-Pin SOT-23 Nexperia PMV45EN2R

RS noliktavas nr.: 136-4806Ražotājs: NexperiaRažotāja kods: PMV45EN2R
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

5.1 A

Maximum Drain Source Voltage

30 V

Series

PMV45EN2

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

42 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

3.6 nC @ 10 V

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Produkta apraksts

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,072

Katrs (Rulli ir 3000) (bez PVN)

€ 0,087

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 5.1 A, 30 V, 3-Pin SOT-23 Nexperia PMV45EN2R

€ 0,072

Katrs (Rulli ir 3000) (bez PVN)

€ 0,087

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 5.1 A, 30 V, 3-Pin SOT-23 Nexperia PMV45EN2R
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

5.1 A

Maximum Drain Source Voltage

30 V

Series

PMV45EN2

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

42 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

3.6 nC @ 10 V

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Produkta apraksts

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more