Tehniskie dokumenti
Specifikācija
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
160 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
320 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.26 nC @ 5 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Produkta apraksts
Dual P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,057
Katrs (tiek piegadats Lente) (bez PVN)
€ 0,069
Katrs (tiek piegadats Lente) (Ieskaitot PVN)
Standarts
30
€ 0,057
Katrs (tiek piegadats Lente) (bez PVN)
€ 0,069
Katrs (tiek piegadats Lente) (Ieskaitot PVN)
Standarts
30
Tehniskie dokumenti
Specifikācija
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
160 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
320 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.26 nC @ 5 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Produkta apraksts