N-Channel MOSFET, 300 mA, 55 V, 3-Pin SOT-323 Nexperia BSH121,135

RS noliktavas nr.: 166-0258Ražotājs: NexperiaRažotāja kods: BSH121,135
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

55 V

Package Type

SOT-323 (SC-70)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.3V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

700 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Width

1.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.2mm

Typical Gate Charge @ Vgs

1 nC @ 8 V

Height

1mm

Minimum Operating Temperature

-65 °C

Izcelsmes valsts

Hong Kong

Produkta apraksts

N-Channel MOSFET, 40V to 55V

MOSFET Transistors, NXP Semiconductors

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Noliktavas stāvoklis patreiz nav pieejams

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Noliktavas stāvoklis patreiz nav pieejams

€ 0,063

Katrs (Rulli ir 10000) (bez PVN)

€ 0,076

Katrs (Rulli ir 10000) (Ieskaitot PVN)

N-Channel MOSFET, 300 mA, 55 V, 3-Pin SOT-323 Nexperia BSH121,135

€ 0,063

Katrs (Rulli ir 10000) (bez PVN)

€ 0,076

Katrs (Rulli ir 10000) (Ieskaitot PVN)

N-Channel MOSFET, 300 mA, 55 V, 3-Pin SOT-323 Nexperia BSH121,135
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

55 V

Package Type

SOT-323 (SC-70)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.3V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

700 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Width

1.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.2mm

Typical Gate Charge @ Vgs

1 nC @ 8 V

Height

1mm

Minimum Operating Temperature

-65 °C

Izcelsmes valsts

Hong Kong

Produkta apraksts

N-Channel MOSFET, 40V to 55V

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt