N-Channel MOSFET, 850 mA, 30 V, 3-Pin SOT-23 Nexperia BSH103,215

RS noliktavas nr.: 103-7554Ražotājs: NexperiaRažotāja kods: BSH103,215
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

850 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

2.1 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Height

1mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,155

Katrs (Rulli ir 3000) (bez PVN)

€ 0,188

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 850 mA, 30 V, 3-Pin SOT-23 Nexperia BSH103,215

€ 0,155

Katrs (Rulli ir 3000) (bez PVN)

€ 0,188

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 850 mA, 30 V, 3-Pin SOT-23 Nexperia BSH103,215
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

850 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

2.1 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Height

1mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more