N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Nexperia 2N7002,215

RS noliktavas nr.: 436-7379PRažotājs: NexperiaRažotāja kods: 2N7002,215
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

830 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-65 °C

Height

1mm

Izcelsmes valsts

China

Produkta apraksts

N-Channel MOSFET, 60V to 80V, Nexperia

MOSFET Transistors, NXP Semiconductors

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N-Channel MOSFET, 115 mA, 60 V, 3-Pin SOT-23 onsemi 2N7002
€ 0,408Katrs (Paka ir 20) (bez PVN)

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€ 0,032

Katrs (tiek piegadats Rulli) (bez PVN)

€ 0,039

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Nexperia 2N7002,215
Izvēlēties iepakojuma veidu

€ 0,032

Katrs (tiek piegadats Rulli) (bez PVN)

€ 0,039

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Nexperia 2N7002,215
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt
N-Channel MOSFET, 115 mA, 60 V, 3-Pin SOT-23 onsemi 2N7002
€ 0,408Katrs (Paka ir 20) (bez PVN)

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

830 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-65 °C

Height

1mm

Izcelsmes valsts

China

Produkta apraksts

N-Channel MOSFET, 60V to 80V, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt
N-Channel MOSFET, 115 mA, 60 V, 3-Pin SOT-23 onsemi 2N7002
€ 0,408Katrs (Paka ir 20) (bez PVN)