N-Channel MOSFET, 192 A, 300 V, 4-Pin SOT-227 IXYS IXFN210N30P3
Tehniskie dokumenti
Specifikācija
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
192 A
Maximum Drain Source Voltage
300 V
Series
HiperFET, Polar3
Package Type
SOT-227
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
14.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
1.5 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
25.07mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
38.23mm
Typical Gate Charge @ Vgs
268 nC @ 10 V
Height
9.6mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 47,10
Katrs (Tubina ir 10) (bez PVN)
€ 56,991
Katrs (Tubina ir 10) (Ieskaitot PVN)
10
€ 47,10
Katrs (Tubina ir 10) (bez PVN)
€ 56,991
Katrs (Tubina ir 10) (Ieskaitot PVN)
10
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
192 A
Maximum Drain Source Voltage
300 V
Series
HiperFET, Polar3
Package Type
SOT-227
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
14.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
1.5 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
25.07mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
38.23mm
Typical Gate Charge @ Vgs
268 nC @ 10 V
Height
9.6mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products