N-Channel MOSFET, 21 A, 650 V, 3-Pin D2PAK Infineon SPB20N60C3ATMA1

RS noliktavas nr.: 898-6882PRažotājs: InfineonRažotāja kods: SPB20N60C3ATMA1
brand-logo
Skatīt visu MOSFET tranzistori

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

650 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

208 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.31mm

Typical Gate Charge @ Vgs

87 nC @ 10 V

Width

11.05mm

Transistor Material

Si

Series

CoolMOS C3

Height

4.57mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

Infineon CoolMOS™C3 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 4,30

Katrs (tiek piegadats Rulli) (bez PVN)

€ 5,203

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

N-Channel MOSFET, 21 A, 650 V, 3-Pin D2PAK Infineon SPB20N60C3ATMA1
Izvēlēties iepakojuma veidu

€ 4,30

Katrs (tiek piegadats Rulli) (bez PVN)

€ 5,203

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

N-Channel MOSFET, 21 A, 650 V, 3-Pin D2PAK Infineon SPB20N60C3ATMA1
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Rullis
10 - 48€ 4,30€ 8,60
50 - 98€ 4,05€ 8,10
100 - 248€ 3,70€ 7,40
250+€ 3,55€ 7,10

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

650 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

208 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.31mm

Typical Gate Charge @ Vgs

87 nC @ 10 V

Width

11.05mm

Transistor Material

Si

Series

CoolMOS C3

Height

4.57mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

Infineon CoolMOS™C3 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more