Dual P-Channel MOSFET, 8 A, 30 V, 8-Pin SOIC Infineon IRF9362PBF

RS noliktavas nr.: 737-7307PRažotājs: InfineonRažotāja kods: IRF9362PBF
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Specifikācija

Channel Type

P

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

32 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

26 nC @ 10 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5mm

Width

4mm

Transistor Material

Si

Series

HEXFET

Minimum Operating Temperature

-55 °C

Height

1.5mm

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Dual P-Channel MOSFET, 8 A, 30 V, 8-Pin SOIC Infineon IRF9362TRPBF
€ 0,876Katrs (tiek piegadats Rulli) (bez PVN)

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P.O.A.

Dual P-Channel MOSFET, 8 A, 30 V, 8-Pin SOIC Infineon IRF9362PBF
Izvēlēties iepakojuma veidu

P.O.A.

Dual P-Channel MOSFET, 8 A, 30 V, 8-Pin SOIC Infineon IRF9362PBF
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt
Dual P-Channel MOSFET, 8 A, 30 V, 8-Pin SOIC Infineon IRF9362TRPBF
€ 0,876Katrs (tiek piegadats Rulli) (bez PVN)

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

32 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

26 nC @ 10 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5mm

Width

4mm

Transistor Material

Si

Series

HEXFET

Minimum Operating Temperature

-55 °C

Height

1.5mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt
Dual P-Channel MOSFET, 8 A, 30 V, 8-Pin SOIC Infineon IRF9362TRPBF
€ 0,876Katrs (tiek piegadats Rulli) (bez PVN)