N-Channel MOSFET, 59 A, 30 V, 2 + Tab-Pin D2PAK Infineon IRF3707ZSTRLPBF

RS noliktavas nr.: 162-3310Ražotājs: InfineonRažotāja kods: IRF3707ZSTRLPBF
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

59 A

Maximum Drain Source Voltage

30 V

Package Type

D2PAK

Mounting Type

Surface Mount

Pin Count

2 + Tab

Maximum Drain Source Resistance

12.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.25V

Minimum Gate Threshold Voltage

1.35V

Maximum Power Dissipation

57 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

9.65mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.67mm

Typical Gate Charge @ Vgs

9.7 nC @ 4.5 V

Height

4.83mm

Series

IRF3707ZS

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,724

Katrs (Paka ir 10) (bez PVN)

€ 0,876

Katrs (Paka ir 10) (Ieskaitot PVN)

N-Channel MOSFET, 59 A, 30 V, 2 + Tab-Pin D2PAK Infineon IRF3707ZSTRLPBF
Izvēlēties iepakojuma veidu

€ 0,724

Katrs (Paka ir 10) (bez PVN)

€ 0,876

Katrs (Paka ir 10) (Ieskaitot PVN)

N-Channel MOSFET, 59 A, 30 V, 2 + Tab-Pin D2PAK Infineon IRF3707ZSTRLPBF
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

59 A

Maximum Drain Source Voltage

30 V

Package Type

D2PAK

Mounting Type

Surface Mount

Pin Count

2 + Tab

Maximum Drain Source Resistance

12.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.25V

Minimum Gate Threshold Voltage

1.35V

Maximum Power Dissipation

57 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

9.65mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.67mm

Typical Gate Charge @ Vgs

9.7 nC @ 4.5 V

Height

4.83mm

Series

IRF3707ZS

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more