N-Channel MOSFET, 130 A, 75 V, 3-Pin TO-220AB Infineon IRF1407PBF

RS noliktavas nr.: 171-1902Ražotājs: InfineonRažotāja kods: IRF1407PBF
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

130 A

Maximum Drain Source Voltage

75 V

Series

IRF1407PbF

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

330 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Length

10.67mm

Typical Gate Charge @ Vgs

160 nC @ 10 V

Width

4.83mm

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Height

16.51mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 2,75

Katrs (Paka ir 5) (bez PVN)

€ 3,328

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 130 A, 75 V, 3-Pin TO-220AB Infineon IRF1407PBF

€ 2,75

Katrs (Paka ir 5) (bez PVN)

€ 3,328

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 130 A, 75 V, 3-Pin TO-220AB Infineon IRF1407PBF
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
5 - 20€ 2,75€ 13,75
25 - 45€ 2,45€ 12,25
50 - 120€ 2,30€ 11,50
125 - 245€ 2,15€ 10,75
250+€ 2,00€ 10,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

130 A

Maximum Drain Source Voltage

75 V

Series

IRF1407PbF

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

330 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Length

10.67mm

Typical Gate Charge @ Vgs

160 nC @ 10 V

Width

4.83mm

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Height

16.51mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more