Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
75 V
Series
IRF1407PbF
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Length
10.67mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Width
4.83mm
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Height
16.51mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 2,75
Katrs (Paka ir 5) (bez PVN)
€ 3,328
Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 2,75
Katrs (Paka ir 5) (bez PVN)
€ 3,328
Katrs (Paka ir 5) (Ieskaitot PVN)
5
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
5 - 20 | € 2,75 | € 13,75 |
25 - 45 | € 2,45 | € 12,25 |
50 - 120 | € 2,30 | € 11,50 |
125 - 245 | € 2,15 | € 10,75 |
250+ | € 2,00 | € 10,00 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
75 V
Series
IRF1407PbF
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Length
10.67mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Width
4.83mm
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Height
16.51mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V