N-Channel MOSFET, 24 A, 700 V, 3-Pin TO-247 Infineon IPW65R095C7XKSA1

RS noliktavas nr.: 897-7636PRažotājs: InfineonRažotāja kods: IPW65R095C7XKSA1
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

700 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

95 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

128 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

16.13mm

Typical Gate Charge @ Vgs

45 nC @ 10 V

Width

21.1mm

Series

CoolMOS C7

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Height

5.21mm

Produkta apraksts

Infineon CoolMOS™C6/C7 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 6,40

Katrs (tiek piegadats Tubina) (bez PVN)

€ 7,744

Katrs (tiek piegadats Tubina) (Ieskaitot PVN)

N-Channel MOSFET, 24 A, 700 V, 3-Pin TO-247 Infineon IPW65R095C7XKSA1
Izvēlēties iepakojuma veidu

€ 6,40

Katrs (tiek piegadats Tubina) (bez PVN)

€ 7,744

Katrs (tiek piegadats Tubina) (Ieskaitot PVN)

N-Channel MOSFET, 24 A, 700 V, 3-Pin TO-247 Infineon IPW65R095C7XKSA1
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

700 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

95 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

128 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

16.13mm

Typical Gate Charge @ Vgs

45 nC @ 10 V

Width

21.1mm

Series

CoolMOS C7

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Height

5.21mm

Produkta apraksts

Infineon CoolMOS™C6/C7 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more