N-Channel MOSFET, 2.2 A, 500 V, 3-Pin DPAK Infineon IPD50R2K0CEAUMA1

RS noliktavas nr.: 214-4379PRažotājs: InfineonRažotāja kods: IPD50R2K0CEAUMA1
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

2.2 A

Maximum Drain Source Voltage

500 V

Series

CoolMOS™ CE

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2 Ω

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

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Noliktavas stāvoklis patreiz nav pieejams

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Noliktavas stāvoklis patreiz nav pieejams

€ 0,15

Katrs (tiek piegadats Rulli) (bez PVN)

€ 0,182

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

N-Channel MOSFET, 2.2 A, 500 V, 3-Pin DPAK Infineon IPD50R2K0CEAUMA1
Izvēlēties iepakojuma veidu

€ 0,15

Katrs (tiek piegadats Rulli) (bez PVN)

€ 0,182

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

N-Channel MOSFET, 2.2 A, 500 V, 3-Pin DPAK Infineon IPD50R2K0CEAUMA1
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

2.2 A

Maximum Drain Source Voltage

500 V

Series

CoolMOS™ CE

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2 Ω

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more