N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK Infineon IPB120N06S4H1ATMA2
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ -T2
Package Type
D2PAK (TO-263)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.002 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 8,25
€ 1,65 Katrs (Paka ir 5) (bez PVN)
€ 9,98
€ 1,996 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
€ 8,25
€ 1,65 Katrs (Paka ir 5) (bez PVN)
€ 9,98
€ 1,996 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ -T2
Package Type
D2PAK (TO-263)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.002 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products