N-Channel MOSFET Transistor & Diode, 170 A, 100 V, 3-Pin D2PAK Infineon IPB033N10N5LFATMA1

RS noliktavas nr.: 220-7379Ražotājs: InfineonRažotāja kods: IPB033N10N5LFATMA1
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

170 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™ 5

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0033 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.1V

Number of Elements per Chip

1

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Noliktavas stāvoklis patreiz nav pieejams

€ 2,30

Katrs (Rulli ir 1000) (bez PVN)

€ 2,783

Katrs (Rulli ir 1000) (Ieskaitot PVN)

N-Channel MOSFET Transistor & Diode, 170 A, 100 V, 3-Pin D2PAK Infineon IPB033N10N5LFATMA1

€ 2,30

Katrs (Rulli ir 1000) (bez PVN)

€ 2,783

Katrs (Rulli ir 1000) (Ieskaitot PVN)

N-Channel MOSFET Transistor & Diode, 170 A, 100 V, 3-Pin D2PAK Infineon IPB033N10N5LFATMA1
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

170 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™ 5

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0033 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.1V

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more