Dual SiC N-Channel MOSFET, 187 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB018N06NF2SATMA1

RS noliktavas nr.: 262-5855PRažotājs: InfineonRažotāja kods: IPB018N06NF2SATMA1
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€ 2,15

Katrs (tiek piegadats Rulli) (bez PVN)

€ 2,602

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

Dual SiC N-Channel MOSFET, 187 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB018N06NF2SATMA1
Izvēlēties iepakojuma veidu

€ 2,15

Katrs (tiek piegadats Rulli) (bez PVN)

€ 2,602

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

Dual SiC N-Channel MOSFET, 187 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB018N06NF2SATMA1
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Rullis
5 - 20€ 2,15€ 10,75
25 - 45€ 1,90€ 9,50
50 - 120€ 1,80€ 9,00
125 - 245€ 1,65€ 8,25
250+€ 1,55€ 7,75

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more