Dual SiC N-Channel MOSFET, 187 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB018N06NF2SATMA1
Tehniskie dokumenti
Specifikācija
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Transistor Material
SiC
Pin Count
3
Mounting Type
Surface Mount
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Maximum Continuous Drain Current
187 A
Brand
InfineonIdeate. Create. Collaborate
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 2,15
Katrs (Paka ir 5) (bez PVN)
€ 2,602
Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
€ 2,15
Katrs (Paka ir 5) (bez PVN)
€ 2,602
Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
Pirkt iepakojumos
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 5 - 20 | € 2,15 | € 10,75 |
| 25 - 45 | € 1,90 | € 9,50 |
| 50 - 120 | € 1,80 | € 9,00 |
| 125 - 245 | € 1,65 | € 8,25 |
| 250+ | € 1,55 | € 7,75 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Transistor Material
SiC
Pin Count
3
Mounting Type
Surface Mount
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Maximum Continuous Drain Current
187 A
Brand
InfineonIdeate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products