Tehniskie dokumenti
Specifikācija
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Transistor Material
SiC
Pin Count
3
Mounting Type
Surface Mount
Maximum Drain Source Voltage
40 V
Package Type
PG-TO263-3
Maximum Continuous Drain Current
191 A
Brand
InfineonNoliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Noliktavas stāvoklis patreiz nav pieejams
€ 0,968
Katrs (Rulli ir 800) (bez PVN)
€ 1,171
Katrs (Rulli ir 800) (Ieskaitot PVN)
Dual SiC N-Channel MOSFET, 191 A, 40 V, 3-Pin PG-TO263-3 Infineon IPB014N04NF2SATMA1
800
€ 0,968
Katrs (Rulli ir 800) (bez PVN)
€ 1,171
Katrs (Rulli ir 800) (Ieskaitot PVN)
Dual SiC N-Channel MOSFET, 191 A, 40 V, 3-Pin PG-TO263-3 Infineon IPB014N04NF2SATMA1
Noliktavas stāvoklis patreiz nav pieejams
800
Tehniskie dokumenti
Specifikācija
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Transistor Material
SiC
Pin Count
3
Mounting Type
Surface Mount
Maximum Drain Source Voltage
40 V
Package Type
PG-TO263-3
Maximum Continuous Drain Current
191 A
Brand
Infineon