Dual SiC N-Channel MOSFET, 190 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB013N06NF2SATMA1
Tehniskie dokumenti
Specifikācija
Channel Mode
Enhancement
Number of Elements per Chip
2
Channel Type
N
Transistor Material
SiC
Pin Count
3
Mounting Type
Surface Mount
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Maximum Continuous Drain Current
190 A
Brand
InfineonIdeate. Create. Collaborate
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 2,25
Katrs (Rulli ir 800) (bez PVN)
€ 2,722
Katrs (Rulli ir 800) (Ieskaitot PVN)
800
€ 2,25
Katrs (Rulli ir 800) (bez PVN)
€ 2,722
Katrs (Rulli ir 800) (Ieskaitot PVN)
800
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Channel Mode
Enhancement
Number of Elements per Chip
2
Channel Type
N
Transistor Material
SiC
Pin Count
3
Mounting Type
Surface Mount
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Maximum Continuous Drain Current
190 A
Brand
InfineonIdeate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products