Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
62 A
Maximum Drain Source Voltage
55 V
Series
HEXFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.011 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
2
Transistor Material
Si
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 2,85
Katrs (Paka ir 5) (bez PVN)
€ 3,448
Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
€ 2,85
Katrs (Paka ir 5) (bez PVN)
€ 3,448
Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
5 - 20 | € 2,85 | € 14,25 |
25 - 45 | € 2,70 | € 13,50 |
50 - 120 | € 2,45 | € 12,25 |
125 - 245 | € 2,20 | € 11,00 |
250+ | € 2,10 | € 10,50 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
62 A
Maximum Drain Source Voltage
55 V
Series
HEXFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.011 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
2
Transistor Material
Si