Dual N-Channel MOSFET, 1.2 A, 60 V, 8-Pin SM Diodes Inc ZXMS6004DT8TA

RS noliktavas nr.: 738-5200Ražotājs: DiodesZetexRažotāja kods: ZXMS6004DT8TA
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

1.2 A

Maximum Drain Source Voltage

60 V

Series

IntelliFET

Package Type

SM

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

2.13 W

Transistor Configuration

Isolated

Number of Elements per Chip

2

Maximum Operating Temperature

+125 °C

Length

4.95mm

Width

3.95mm

Transistor Material

Si

Minimum Operating Temperature

-40 °C

Height

1.5mm

Izcelsmes valsts

Germany

Produkta apraksts

IntelliFET Self-protected MOSFETs, Diodes Inc

IntelliFET are self-protected MOSFETs that integrate a complete array of protection circuits that guard against ESD (Electrostatic Sensitive Device), over-current, over-voltage, and over-temperature conditions.

MOSFET Transistors, Diodes Inc.

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Noliktavas stāvoklis patreiz nav pieejams

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Noliktavas stāvoklis patreiz nav pieejams

€ 0,577

Katrs (Paka ir 5) (bez PVN)

€ 0,698

Katrs (Paka ir 5) (Ieskaitot PVN)

Dual N-Channel MOSFET, 1.2 A, 60 V, 8-Pin SM Diodes Inc ZXMS6004DT8TA
Izvēlēties iepakojuma veidu

€ 0,577

Katrs (Paka ir 5) (bez PVN)

€ 0,698

Katrs (Paka ir 5) (Ieskaitot PVN)

Dual N-Channel MOSFET, 1.2 A, 60 V, 8-Pin SM Diodes Inc ZXMS6004DT8TA
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

1.2 A

Maximum Drain Source Voltage

60 V

Series

IntelliFET

Package Type

SM

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

2.13 W

Transistor Configuration

Isolated

Number of Elements per Chip

2

Maximum Operating Temperature

+125 °C

Length

4.95mm

Width

3.95mm

Transistor Material

Si

Minimum Operating Temperature

-40 °C

Height

1.5mm

Izcelsmes valsts

Germany

Produkta apraksts

IntelliFET Self-protected MOSFETs, Diodes Inc

IntelliFET are self-protected MOSFETs that integrate a complete array of protection circuits that guard against ESD (Electrostatic Sensitive Device), over-current, over-voltage, and over-temperature conditions.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more