Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1.2 A
Maximum Drain Source Voltage
60 V
Series
IntelliFET
Package Type
SM
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.13 W
Transistor Configuration
Isolated
Transistor Material
Si
Length
4.95mm
Width
3.95mm
Number of Elements per Chip
2
Maximum Operating Temperature
+125 °C
Height
1.5mm
Minimum Operating Temperature
-40 °C
Izcelsmes valsts
Germany
Produkta apraksts
IntelliFET Self-protected MOSFETs, Diodes Inc
IntelliFET are self-protected MOSFETs that integrate a complete array of protection circuits that guard against ESD (Electrostatic Sensitive Device), over-current, over-voltage, and over-temperature conditions.
MOSFET Transistors, Diodes Inc.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 571,00
€ 0,571 Katrs (Rulli ir 1000) (bez PVN)
€ 690,91
€ 0,691 Katrs (Rulli ir 1000) (Ieskaitot PVN)
1000
€ 571,00
€ 0,571 Katrs (Rulli ir 1000) (bez PVN)
€ 690,91
€ 0,691 Katrs (Rulli ir 1000) (Ieskaitot PVN)
1000
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1.2 A
Maximum Drain Source Voltage
60 V
Series
IntelliFET
Package Type
SM
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.13 W
Transistor Configuration
Isolated
Transistor Material
Si
Length
4.95mm
Width
3.95mm
Number of Elements per Chip
2
Maximum Operating Temperature
+125 °C
Height
1.5mm
Minimum Operating Temperature
-40 °C
Izcelsmes valsts
Germany
Produkta apraksts
IntelliFET Self-protected MOSFETs, Diodes Inc
IntelliFET are self-protected MOSFETs that integrate a complete array of protection circuits that guard against ESD (Electrostatic Sensitive Device), over-current, over-voltage, and over-temperature conditions.